Methods for forming contact structures and semiconductor devices thereof

ABSTRACT

Embodiments of methods for forming contact structures and semiconductor devices thereof are disclosed. In an example, a method for forming a semiconductor device includes forming a spacer structure from a first surface of the base structure into the base structure, forming a first contact portion surrounded by the spacer structure, and forming a second contact portion in contact with the first contact portion. The second contact extends from a second surface of the base structure into the base structure.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a divisional of U.S. application Ser. No.17/020,473, filed on Sep. 14, 2020, entitled “METHODS FOR FORMINGCONTACT STRUCTURES AND SEMICONDUCTOR DEVICES THEREOF,” which is acontinuation of International Application No. PCT/CN2020/106068, filedon Jul. 31, 2020, entitled “METHODS FOR FORMING CONTACT STRUCTURES ANDSEMICONDUCTOR DEVICES THEREOF,” both of which are incorporated herein byreference in their entireties.

BACKGROUND

Embodiments of the present disclosure relate to methods for formingcontact structures and semiconductor devices thereof.

Planar memory cells are scaled to smaller sizes by improving processtechnology, circuit design, programming algorithm, and fabricationprocess. However, as feature sizes of the memory cells approach a lowerlimit, planar process and fabrication techniques become challenging andcostly. As a result, memory density for planar memory cells approachesan upper limit.

A 3D memory architecture can address the density limitation in planarmemory cells. The 3D memory architecture includes a memory array andperipheral devices for controlling signals to and from the memory array.

SUMMARY

Embodiments of methods for forming contact structures and semiconductordevices thereof are disclosed herein.

In one example, a semiconductor device includes an insulating layer, aconductive layer over the insulating layer, and a spacer structure inthe conductive layer and in contact with the insulating layer. Thesemiconductor device also includes a first contact structure in thespacer structure and extending vertically through the insulating layer.The first contact structure includes a first contact portion and asecond contact portion in contact with each other. An upper surface ofthe second contact portion is coplanar with an upper surface of theconductive layer.

In another example, a semiconductor device includes an insulating layer,a conductive layer over the insulating layer, and a spacer structure inthe conductive layer and in contact with the insulating layer. Thesemiconductor device also includes a first contact structure in thespacer structure and extending vertically through the insulating layer.The first contact structure includes a first contact portion and asecond contact portion in contact with each other. The contact structurealso includes a lower surface of the first contact portion is in contactwith an upper surface of the second contact portion at a contactinterface that is below an upper surface of the conductive layer.

In still another example, a method for forming a semiconductor deviceincludes forming a spacer structure from a first surface of the basestructure into the base structure, forming a first contact portionsurrounded by the spacer structure, and forming a second contact portionin contact with the first contact portion. The second contact extendsfrom a second surface of the base structure into the base structure.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are incorporated herein and form a partof the specification, illustrate embodiments of the present disclosureand, together with the description, further serve to explain theprinciples of the present disclosure and to enable a person skilled inthe pertinent art to make and use the present disclosure.

FIG. 1 illustrates a cross-sectional view of an existing contactstructure in a semiconductor device.

FIG. 2A illustrates a cross-sectional view of an exemplary contactstructure in a semiconductor device, according to some embodiments ofthe present disclosure.

FIG. 2B illustrates a top view of the contact structure in FIG. 2A,according to some embodiments of the present disclosure.

FIG. 3A illustrates a cross-sectional view of another exemplary contactstructure in a semiconductor device, according to some embodiments ofthe present disclosure.

FIG. 3B illustrates a top view of the contact structure in FIG. 3A,according to some embodiments of the present disclosure.

FIGS. 4A-4D illustrate an exemplary fabrication process for forming acontact structure, according to some embodiments of the presentdisclosure.

FIGS. 5A-5D illustrate an exemplary fabrication process for forminganother contact structure, according to some embodiments of the presentdisclosure.

FIG. 6 illustrates part of an exemplary semiconductor device, accordingto various embodiments of the present disclosure.

FIG. 7 illustrates a flowchart of an exemplary method for forming acontact structure, according to some embodiments of the presentdisclosure.

FIG. 8 illustrates a flowchart of an exemplary method for forminganother contact structure, according to some embodiments of the presentdisclosure.

Embodiments of the present disclosure will be described with referenceto the accompanying drawings.

DETAILED DESCRIPTION

Although specific configurations and arrangements are discussed, itshould be understood that this is done for illustrative purposes only. Aperson skilled in the pertinent art will recognize that otherconfigurations and arrangements can be used without departing from thespirit and scope of the present disclosure. It will be apparent to aperson skilled in the pertinent art that the present disclosure can alsobe employed in a variety of other applications.

It is noted that references in the specification to “one embodiment,”“an embodiment,” “an example embodiment,” “some embodiments,” etc.,indicate that the embodiment described may include a particular feature,structure, or characteristic, but every embodiment may not necessarilyinclude the particular feature, structure, or characteristic. Moreover,such phrases do not necessarily refer to the same embodiment. Further,when a particular feature, structure or characteristic is described inconnection with an embodiment, it would be within the knowledge of aperson skilled in the pertinent art to effect such feature, structure orcharacteristic in connection with other embodiments whether or notexplicitly described.

In general, terminology may be understood at least in part from usage incontext. For example, the term “one or more” as used herein, dependingat least in part upon context, may be used to describe any feature,structure, or characteristic in a singular sense or may be used todescribe combinations of features, structures or characteristics in aplural sense. Similarly, terms, such as “a,” “an,” or “the,” again, maybe understood to convey a singular usage or to convey a plural usage,depending at least in part upon context. In addition, the term “basedon” may be understood as not necessarily intended to convey an exclusiveset of factors and may, instead, allow for existence of additionalfactors not necessarily expressly described, again, depending at leastin part on context.

It should be readily understood that the meaning of “on,” “above,” and“over” in the present disclosure should be interpreted in the broadestmanner such that “on” not only means “directly on” something but alsoincludes the meaning of “on” something with an intermediate feature or alayer therebetween, and that “above” or “over” not only means themeaning of “above” or “over” something but can also include the meaningit is “above” or “over” something with no intermediate feature or layertherebetween (i.e., directly on something).

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper,” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations), and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

As used herein, the term “substrate” refers to a material onto whichsubsequent material layers are added. The substrate itself can bepatterned. Materials added on top of the substrate can be patterned orcan remain unpatterned. Furthermore, the substrate can include a widearray of semiconductor materials, such as silicon, germanium, galliumarsenide, indium phosphide, etc. Alternatively, the substrate can bemade from an electrically non-conductive material, such as a glass, aplastic, or a sapphire wafer.

As used herein, the term “layer” refers to a material portion includinga region with a thickness. A layer can extend over the entirety of anunderlying or overlying structure or may have an extent less than theextent of an underlying or overlying structure. Further, a layer can bea region of a homogeneous or inhomogeneous continuous structure that hasa thickness less than the thickness of the continuous structure. Forexample, a layer can be located between any pair of horizontal planesbetween, or at, an upper surface and a lower surface of the continuousstructure. A layer can extend horizontally, vertically, and/or along atapered surface. A substrate can be a layer, can include one or morelayers therein, and/or can have one or more layer thereupon, thereabove,and/or therebelow. A layer can include multiple layers. For example, aninterconnect layer can include one or more conductor and contact layers(in which interconnect lines and/or vertical interconnect access (VIA)contacts are formed) and one or more dielectric layers.

As used herein, the term “nominal/nominally” refers to a desired, ortarget, value of a characteristic or parameter for a component or aprocess operation, set during the design phase of a product or aprocess, together with a range of values above and/or below the desiredvalue. The range of values can be due to slight variations inmanufacturing processes or tolerances. As used herein, the term “about”indicates the value of a given quantity that can vary based on aparticular technology node associated with the subject semiconductordevice. Based on the particular technology node, the term “about” canindicate a value of a given quantity that varies within, for example,10-30% of the value (e.g., ±10%, ±20%, or ±30% of the value).

As used herein, a staircase structure refers to a set of surfaces thatinclude at least two horizontal surfaces (e.g., along x-y plane) and atleast two (e.g., first and second) vertical surfaces (e.g., alongz-axis) such that each horizontal surface is adjoined to a firstvertical surface that extends upward from a first edge of the horizontalsurface, and is adjoined to a second vertical surface that extendsdownward from a second edge of the horizontal surface. A “step” or“stair” refers to a vertical shift in the height of a set of adjoinedsurfaces. In the present disclosure, the term “stair” and the term“step” refer to one level of a staircase structure and are usedinterchangeably. In the present disclosure, a horizontal direction canrefer to a direction (e.g., the x-direction or the y-direction) parallelwith the top surface of the substrate (e.g., the substrate that providesthe fabrication platform for formation of structures over it), and avertical direction can refer to a direction (e.g., the z-direction)perpendicular to the top surface of the structure.

As used herein, the term “3D NAND memory device” refers to asemiconductor device with vertically oriented strings of memory celltransistors (referred to herein as “memory strings,” such as NAND memorystrings) on a laterally-oriented substrate so that the memory stringsextend in the vertical direction with respect to the substrate. As usedherein, the term “vertical/vertically” means nominally perpendicular tothe lateral surface of a substrate.

In some 3D NAND memory devices, semiconductor plugs are selectivelygrown to surround the sidewalls of channel structures, e.g., known assidewall selective epitaxial growth (SEG). Compared with another type ofsemiconductor plugs that are formed at the lower end of the channelstructures, e.g., bottom SEG, the formation of sidewall SEG avoids theetching of the memory film and semiconductor channel at the lowersurface of channel holes (also known as “SONO” punch), therebyincreasing the process window, in particular when fabricating 3D NANDmemory devices with advanced technologies, such as having 96 or morelevels with a multi-deck architecture. Moreover, the sidewall SEGstructure can be combined with backside processes to form sourcecontacts from the backside of the substrate to avoid leakage current andparasitic capacitance between front side source contacts and word linesand increase the effective device area.

Peripheral contacts, such as through-silicon contacts (TSVs), formed inthe peripheral region and facilitating electrical contact between memorycells and peripheral circuits, can also be formed using backsideprocesses in these 3D NAND memory devices. However, the fabrication ofperipheral contacts faces challenges because of increasing levels of the3D NAND memory devices. For example, the formation of peripheralcontacts using backside processes often includes a two-step etchprocesses, e.g., a first etch process to form a first opening for afirst contact portion above the substrate, and a second etch process toform a second opening from the backside for a second contact portion. Adielectric spacer is often deposited in the second opening before aconductive material is deposited to fill the second opening and formsthe second contact portion. The two-step etching and the depositionprocesses can be undesirably lengthy and complex.

FIG. 1 illustrates a cross-sectional view of an existing contactstructure in a semiconductor device 100. Semiconductor device 100includes a base structure 104, an insulating structure 118 on basestructure 1104, and a memory stack 106 on base structure 104 and ininsulating structure 118. Base structure 104 includes an insulatinglayer 102 and a polysilicon layer 108 over insulating layer 102. Memorystack 106 has a staircase structure of a plurality of stairs andincludes a plurality of interleaved conductor layers 110 and dielectriclayers 112. Semiconductor device 100 also includes a plurality ofchannel structures (not shown in FIG. 1) that extend into and areelectrically connected to polysilicon layer 108. Intersections of thechannel structures and conductor layers 110 form a plurality of memorycells. Semiconductor device 100 also includes a source contact 126extending in insulating layer 102 and polysilicon layer 108. Sourcecontact 126 is in contact with polysilicon layer 108 and is electricallyconnected to the channel structures for applying a source voltage.Semiconductor device 100 also includes a word line contact 114 extendingin insulating structure 118 and in contact with conductor layer 110 of arespective stair.

Semiconductor device 100 also includes a spacer 120 in polysilicon layer108 and a peripheral contact 116 extending in insulating structure 118,spacer 120, and insulating layer 102. Peripheral contact 116 includes afirst contact portion 116-1 extending in insulating structure 118 and asecond contact portion 116-2 extending in base structure 104. First andsecond contact portions 116-1 and 116-2 are jointly connected to eachother apart from memory stack 106. Second contact portion 116-2 andsource contact 126 are formed by backside processes. Spacer 120insulates second contact portion 116-2 from polysilicon layer 108.

To form spacer 120 and second contact portion 116-2, a hole is formed byremoving a portion of base structure 104 from the back side (e.g., lowersurface) after first contact portion 116-1 is formed. The hole extendsin insulating layer 102 and polysilicon layer 108 until it is in contactwith first contact portion 116-1. A dielectric material is thendeposited in the hole. After a recess etch to remove a portion of thedielectric material to expose first contact portion 116-1, a conductivematerial is deposited over the dielectric layer to fill in the hole andform second contact portion 116-2. The portion of the dielectricmaterial in polysilicon layer 108 forms spacer 120. Often, to ensuresecond contact portion 116-2 can form desirable contact with firstcontact portion 116-1, the hole is over etched into insulating structure118. An upper surface of the hole (i.e., the upper surface of secondcontact portion 116-2) is often not flat, e.g., not coplanar with anupper surface of polysilicon layer 108. For example, protrudingstructures can be formed on the upper surface of second contact portion116-2, as shown in FIG. 1. As described above, the formation ofperipheral contact 116, especially second contact portion 116-2, can belength and complex. The existing fabrication process to form theperipheral contact, e.g., TSV, needs to be improved.

Various embodiments in accordance with the present disclosure provideimproved semiconductor devices and fabrication methods thereof.According to the disclosed fabrication methods, to form a contactstructure, the spacer structure is formed on the front side of the basestructure. The spacer structure can be formed by an etch processfollowed by a deposition process to fill the opening structure formed bythe etch process. The etch and the deposition processes, although theycan be performed separately, can be incorporated into the currentprocess flow without additional fabrication steps. For example, the etchprocess can be performed in any suitable etching/patterning process forforming another structure in the semiconductor device prior to theformation of the first contact portion, and the deposition process canbe any suitable deposition process for forming another structure in thesemiconductor device prior to the formation of the first contactportion. In some embodiments, the etch process is performed using a zeromask, which is employed for patterning structures in the substrate priorto any structures are formed on the base structure. In some embodiments,the etch process is the same patterning process that patterns structures(e.g., bottom-select-gate cut structures in a memory stack) on the basestructure. In some embodiments, the deposition process can be the samedeposition process that forms the insulating structure in which a memorystack is located. The fabrication process can thus be simplified.

The spacer structure can be formed from a trench structure or from ahole in the polysilicon layer. The second contact portion is located inthe spacer structure and is insulated from the polysilicon layer. Insome embodiments, forming the spacer structure from a hole in theconductive layer allows the lower surface of the first contact portionto be closer to the insulating layer, reducing the etching needed toform the hole that forms the second conductor portion, furthersimplifying the fabrication process.

FIG. 2A illustrates a cross-sectional view of an exemplary contactstructure in a semiconductor device 200, according to some embodiments.FIG. 2B illustrates a top view of the contact structure in semiconductordevice 200, according to some embodiments. For the ease of illustration,FIGS. 2A and 2B are described together.

As shown in FIG. 2A, semiconductor device 200 includes a base structure204, an insulating structure 218 over base structure 204, and a contactstructure 216 extending in insulating structure 218 and base structure204. Semiconductor device 200 may also include a substrate on which basestructure 204 is located on. In some embodiments, semiconductor device200 includes a memory stack 206 over base structure 204 and ininsulating structure 218. Semiconductor device 200 may include a wordline contact 214, in insulating structure 218, in contact with andconductively connected to memory stack 206. In some embodiments,semiconductor device 200 includes a source contact structure 226 incontact with and conductively connected to base structure 204. In someembodiments, contact structure 216 is located in a peripheral region ofsemiconductor device 200. Memory stack 206 may be located in a coreregion and/or a staircase region of semiconductor device 200. As anexample, in the present disclosure, the semiconductor devices arerepresented by 3D NAND memory devices, and contact structures, e.g.,216, are described as peripheral contacts in the 3D NAND memory devices.In some embodiments, contact structure 216 electrically connects aperipheral circuit and a contact pad (not shown) on opposite sides ofbase structure 204 of semiconductor device 200, such that the peripheralcircuit can be electrically connected to external circuits through thecontact pad. In some embodiments, contact structure 216 is electricallyconnected to a peripheral circuit and source contact structure 226 onopposite sides of base structure 204 of semiconductor device 200, suchthat the peripheral circuit can be electrically connected to sourcecontact structure 226 to control the operation of the source of the 3DNAND memory device. It should be understood that the structures andfabrication methods to form these contact structures can be employed toform contact structures in any other suitable structures/devices aswell.

The substrate of semiconductor device 200 can include silicon (e.g.,single crystalline silicon), silicon germanium (SiGe), gallium arsenide(GaAs), germanium (Ge), silicon on insulator (SOI), germanium oninsulator (GOI), or any other suitable materials. In some embodiments,the substrate is a thinned substrate (e.g., a semiconductor layer),which was thinned by grinding, etching, chemical mechanical polishing(CMP), or any combination thereof. In some embodiments, the substrate isremoved and not included in semiconductor device 200. It is noted thatx, y, and z axes are included in figures of the present disclosure tofurther illustrate the spatial relationship of the components insemiconductor devices. As an example, the substrate of semiconductordevice 200 includes two lateral surfaces (e.g., an upper surface and alower surface) extending laterally in the x-direction and they-direction (i.e., the lateral directions). The z-direction representsthe direction perpendicular to the x-y plane (i.e., the plane formed bythe x-direction and y-direction). As used herein, whether one component(e.g., a layer or a device) is “on,” “above,” or “below” anothercomponent (e.g., a layer or a device) of a semiconductor device (e.g.,semiconductor device 200) is determined relative to the substrate of thesemiconductor device in the z-direction (i.e., the vertical direction)when the substrate is positioned in the lowest plane of thesemiconductor device in the z-direction. The same notion for describingthe spatial relationships is applied throughout the present disclosure.

In some embodiments, semiconductor device 200 is part of anon-monolithic 3D NAND memory device, in which the components are formedseparately on different substrates and then bonded in a face-to-facemanner, a face-to-back manner, or a back-to-back manner Peripheraldevices (not shown), such as any suitable digital, analog, and/ormixed-signal peripheral circuits used for facilitating the operation ofsemiconductor device 200, can be formed on a separate peripheral devicesubstrate different from the memory array substrate on which thecomponents shown in FIG. 2A are formed. It is understood that the memoryarray substrate may be removed from semiconductor device 200 asdescribed below in detail, and the peripheral device substrate maybecome the substrate of semiconductor device 200. It is furtherunderstood that depending on the way how the peripheral device substrateand the memory array device substrate are bonded, the memory arraydevices (e.g., shown in FIG. 2A) may be in the original positions or maybe flipped upside down in semiconductor device 200. For ease ofreference, FIG. 2A depicts a state of semiconductor device 200 in whichthe memory array devices are in the original positions (i.e., notflipped upside down). However, it is understood that, in some examples,the memory array devices shown in FIG. 2A may be flipped upside down insemiconductor device 200, and their relative positions may be changedaccordingly. The same notion for describing the spatial relationships isapplied throughout the present disclosure.

As shown in FIG. 2A, base structure 204 can include an insulating layer202 and a polysilicon layer 208 on insulating layer 202. Optionally,base structure 204 may include a stop layer 224 between insulating layer202 and polysilicon layer 208. Insulating layer 202 can include one ormore interlayer dielectric (ILD) layers (also known as “intermetaldielectric (IMD) layers”) in which the interconnect lines and VIAcontacts can form. The ILD layers of insulating layer 202 can includedielectric materials including, but not limited to, silicon oxide,silicon nitride, silicon oxynitride, low dielectric constant (low-k)dielectrics, or any combination thereof. In some embodiments, insulatinglayer 202 includes silicon oxide. Stop layer 224, if any, can bedisposed directly on insulating layer 202. Stop layer 224 can be asingle-layered structure or a multiple-layered structure. In someembodiments, stop layer 224 is a single-layered structure and includes ahigh dielectric constant (high-k) dielectric layer. In some embodiments,stop layer 224 is a double-layered structure and includes a first stoplayer on a second stop layer. The first stop layer can include siliconnitride, and the second stop layer can include high-k dielectric. Thehigh-k dielectric layer can include, for example, aluminum oxide,hafnium oxide, zirconium oxide, or titanium oxide, to name a few. In oneexample, stop layer 224 may include aluminum oxide. As described belowin detail, since the function of stop layer 224 is to stop the etchingof channel holes, it is understood that stop layer 224 may include anyother suitable materials that have a relatively high etching selectivity(e.g., greater than about 5) with respect to the materials in the layersthereabove. In some embodiments, besides functioning as an etch stoplayer, stop layer 224 also functions as the backside substrate thinningstop layer.

Polysilicon layer 208 may be disposed directly on stop layer 224. Insome embodiments, a pad oxide layer (e.g., a silicon oxide layer) isdisposed between stop layer 224 and polysilicon layer 208 to relax thestress between polysilicon layer 208 and stop layer 224 (e.g., analuminum oxide layer). Polysilicon layer 208 includes an N-type dopedpolysilicon layer, according to some embodiments. That is, polysiliconlayer 208 can be doped with any suitable N-type dopants, such asphosphorus (P), arsenic (Ar), or antimony (Sb), which contribute freeelectrons and increase the conductivity of the intrinsic semiconductor.Polysilicon layer 208 may include a polysilicon sublayer 208-1 betweenthe top and lower surfaces of polysilicon layer 108 and may beconductively connected to the semiconductor channel of a 3D NAND memorystring and the source contact structure of semiconductor device 200. Asdescribed below in detail, due to a diffusion process, polysilicon layer208 can have a suitable uniform doping concentration profile in thevertical direction. It is understood that as sublayer 208-1 ofpolysilicon layer 208 may have the same polysilicon material as the restof polysilicon layer 208, and the doping concentration may be uniform inpolysilicon layer 208 after diffusion, sublayer 208-1 may not bedistinguishable from the rest of polysilicon layer 208 in semiconductordevice 200. Nevertheless, sublayer 208-1 refers to the part ofpolysilicon layer 208 that is in contact with the semiconductor channel,instead of the memory film, in the lower portion of the channelstructure.

Although FIG. 2A shows that polysilicon layer 208 is above stop layer224, as described above, it is understood that stop layer 224 may beabove polysilicon layer 208 in some examples because the memory arraydevices shown in FIG. 2A may be flipped upside down, and their relativepositions may be changed accordingly in semiconductor device 200. Insome embodiments, the memory array devices shown in FIG. 2A are flippedupside down (in the top) and bonded to peripheral devices (in thebottom) in semiconductor device 200, such that stop layer 224 is abovepolysilicon layer 208. Although in the present disclosure polysiliconlayer 208 is described as the conductive layer for facilitatingelectrical coupling between the source contact of semiconductor device200 and memory stack 206, in various embodiments, any other suitableconductive material may also be formed between memory stack 206 andinsulating layer 202 for performing similar/same functions aspolysilicon layer 208.

Memory stack 206 can include a plurality of interleaved conductor layers210 and dielectric layers 212 over polysilicon layer 208. Conductorlayers 210 and dielectric layers 212 in memory stack 206 can alternatein the vertical direction. In other words, except for the ones at thetop or bottom of memory stack 206, each conductor layer 210 can beadjoined by two dielectric layers 212 on both sides, and each dielectriclayer 212 can be adjoined by two conductor layers 210 on both sides.Conductor layers 210 can include conductive materials including, but notlimited to, W, Co, Cu, Al, polysilicon, doped silicon, silicides, or anycombination thereof. Each conductor layer 210 can include a gateelectrode (gate line) surrounded by an adhesion layer and a gatedielectric layer. The gate electrode of conductor layer 210 can extendlaterally as a word line, ending at one or more staircase structures ofmemory stack 206. Dielectric layers 212 can include dielectric materialsincluding, but not limited to, silicon oxide, silicon nitride, siliconoxynitride, or any combination thereof. Memory stack 206 may have astaircase structure, which includes a plurality of stairs, e.g.,extending laterally along the x/y direction. Each stair may include oneor more pairs of conductor layer 210 and dielectric layers 212 (referredto as conductor/dielectric layer pairs). A word line contact 214,extending in insulating structure 218, may be in contact with andconductively connected to a top conductor layer 210 of a respectivestair, as shown in FIG. 2A. Word line contact 214 can include conductivematerials including, but not limited to, W, Co, Cu, Al, polysilicon,doped silicon, silicides, or any combination thereof. Insulatingstructure 218 can include dielectric materials including, but notlimited to, silicon oxide, silicon nitride, silicon oxynitride, or anycombination thereof.

In some embodiments, semiconductor device 200 is a 3D NAND memory deviceand includes a plurality of memory cells formed in memory stack 206. Thememory cells may be formed by the intersections of 3D NAND memorystrings in memory stack 206 and conductor layers 210. FIG. 6 illustratesa cross-sectional view of a channel structure in memory stack 206.

As shown in FIG. 6, a channel structure 612 extends vertically throughmemory stack 206 and polysilicon layer 208, stopping at stop layer 224,if any. That is, channel structure 612 can include two portions: thelower portion surrounded by polysilicon layer 208 (i.e., below theinterface between polysilicon layer 208 and memory stack 206) and theupper portion surrounded by memory stack 206 (i.e., above the interfacebetween polysilicon layer 208 and memory stack 206). As used herein, the“upper portion/end” of a component (e.g., channel structure 612) is theportion/end farther away from the substrate in the z-direction, and the“lower portion/end” of the component (e.g., channel structure 612) isthe portion/end closer to the substrate in the z-direction when thesubstrate is positioned in the lowest plane of semiconductor device 200.In some embodiments, each channel structure 612 does not extend furtherbeyond stop layer 224 as the etching of the channel hole being stoppedby stop layer 224. For example, the lower end of channel structure 612may be nominally flush with the upper surface of stop layer 224.

Channel structure 612 can include a channel hole filled withsemiconductor material(s) (e.g., as a semiconductor channel 616) anddielectric material(s) (e.g., as a memory film 614). In someembodiments, semiconductor channel 616 includes silicon, such asamorphous silicon, polysilicon, or single crystalline silicon. In oneexample, semiconductor channel 616 includes polysilicon. In someembodiments, memory film 614 is a composite layer including a tunnelinglayer, a storage layer (also known as a “charge trap layer”), and ablocking layer. The remaining space of the channel hole can be partiallyor fully filled with a capping layer 618 including dielectric materials,such as silicon oxide, and/or an air gap. Channel structure 612 can havea cylinder shape (e.g., a pillar shape). Capping layer 618,semiconductor channel 616, the tunneling layer, the storage layer, andthe blocking layer of memory film 614 are arranged radially from thecenter toward the outer surface of the pillar in this order, accordingto some embodiments. The tunneling layer can include silicon oxide,silicon oxynitride, or any combination thereof. The storage layer caninclude silicon nitride, silicon oxynitride, or any combination thereof.The blocking layer can include silicon oxide, silicon oxynitride, high-kdielectrics, or any combination thereof. In one example, memory film 614can include a composite layer of silicon oxide/siliconoxynitride/silicon oxide (ONO). In some embodiments, channel structure612 further includes a channel plug 620 at the top of the upper portionof channel structure 612. Channel plug 620 can include semiconductormaterials (e.g., polysilicon). In some embodiments, channel plug 620functions as the drain of the NAND memory string.

As shown in FIG. 6, part of semiconductor channel 616 along the sidewallof channel structure 612 (e.g., in the lower portion of channelstructure 612) is in contact with polysilicon sublayer 208-1, accordingto some embodiments. That is, memory film 614 is disconnected in thelower portion of channel structure 612 that abuts sublayer 208-1 ofpolysilicon layer 208, exposing semiconductor channel 616 to be incontact with the surrounding polysilicon sublayer 208-1, according tosome embodiments. As a result, polysilicon sublayer 208-1 surroundingand in contact with semiconductor channel 616 can work as the “sidewallSEG” of channel structure 612. In some embodiments, source contactstructure 226 is in contact with polysilicon layer 208 and iselectrically connected to semiconductor channel 616 through polysiliconlayer 208.

As shown in FIG. 6, in some embodiments, semiconductor device 200further includes an insulating spacer 622 extending vertically throughinterleaved conductor layers 210 and dielectric layers 212 of memorystack 206. In some embodiments, insulating spacer 622 extends intopolysilicon layer 208 and stops at polysilicon sublayer 208-1, accordingto some embodiments. In some embodiments, the lower end of insulatingspacer 622 is nominally flush with the upper surface of polysiliconsublayer 208-1. Each insulating spacer 622 can also extend laterally toseparate channel structures 612 into a plurality of blocks. Differentfrom the slit structures in some 3D NAND memory devices, insulatingspacer 622 does not include any contact therein (i.e., not functioningas the source contact), according to some embodiments. In someembodiments, each insulating spacer 622 includes an opening (e.g., aslit) filled with one or more dielectric materials, including, but notlimited to, silicon oxide, silicon nitride, silicon oxynitride, or anycombination thereof. In one example, each insulating spacer 622 may befilled with silicon oxide as an insulator core 626 and high-kdielectrics connecting with the gate dielectric layers.

Source contact structure 226 may extend vertically through insulatinglayer 202 and stop layer 224 (if any) from the opposite side ofpolysilicon layer 208 with respect to stop layer 224 (i.e., thebackside) to be in contact with polysilicon layer 208. It is understoodthat the depth that source contact structure 226 extends intopolysilicon layer 208 may vary in different examples. Source contactstructure 226 can electrically connect the source of the NAND memorystrings of semiconductor device 200 to the peripheral devices throughpolysilicon layer 208 from the backside of the memory array substrate(removed) and thus, can be referred to herein as a “backside source pickup” as well. Source contact structure 226 can include any suitable typesof contacts. In some embodiments, source contact structure 226 includesa VIA contact. In some embodiments, source contact structure 226includes a wall-shaped contact extending laterally. Source contactstructure 226 can include one or more conductive layers, such as a metallayer, for example, tungsten (W), cobalt (Co), copper (Cu), or aluminum(Al) or a silicide layer surrounded by an adhesive layer (e.g., titaniumnitride (TiN)).

Referring back to FIGS. 2A and 2B, contact structure 216 may extend ininsulating structure 218 and base structure 204 and may be conductivelyconnected to any peripheral circuits for the operation of memory cells.In some embodiments, contact structure 216 extends through polysiliconlayer 208 and insulating layer 202. Contact structure 216 may include afirst contact portion 216-1 extending in insulating structure 218 and asecond contact portion 216-2 extending in base structure 204 (e.g.,polysilicon layer 208 and insulating layer 202, and stop layer 224, ifany). First and second contact portions 216-1 and 216-2 may be incontact with and conductively connected to each other at a contactinterface. Semiconductor device 200 may also include a spacer structure220 in polysilicon layer 208 and surrounding second contact portion216-2 such that second contact portion 216-2 is insulated frompolysilicon layer 208.

In some embodiments, as shown in FIG. 2B, a lateral cross-sectional areaof second contact portion 216-2 is greater than or equal to a lateralcross-sectional area of first contact portion 216-1 such that firstcontact portion 216-1 is fully overlapped with second contact portion216-2. The lateral cross-sections of first and second contact portions216-1 and 216-2 can each have any suitable shapes such as oval, squared,rectangular, and circular shapes. For example, the lateral cross-sectionof first and second contact portions 216-1 and 216-2 may respectively benominally circular and squared. The upper surface of second contactportion 216-2 may be sufficiently flat, e.g., nominally leveled/coplanarwith the upper surface of polysilicon layer 208. The contact interfacebetween first and second contact portions 216-1 and 216-2 may becoplanar (or at least nominally coplanar) with the upper surface ofpolysilicon layer 208. That is, the lower surface of first contactportion 216-1 and the upper surface of second contact portion 216-2 mayeach be coplanar (or at least nominally coplanar with) with the uppersurface of polysilicon layer 208. In some embodiments, first and secondcontact portions 216-1 and 216-2 can each be made of tungsten, cobalt,copper, or aluminum, and/or silicide.

Spacer structure 220 may be in polysilicon layer 208, in contact withand surrounding second contact portion 216-2 such that second contactportion 216-2 (or contact structure 216) is insulated from polysiliconlayer 208. The lateral dimensions of spacer structure 220 (e.g., in thex-y plane) may be sufficiently large to insulate second contact portion216-2 from polysilicon layer 208 in all directions. An upper surface ofspacer structure 220, in contact with insulating structure 218, may becoplanar with the upper surface of polysilicon layer 208. A lowersurface of spacer structure 220 may be in contact with insulating layer202 (or stop layer 224 if any) such that second contact portion 216-2 isfully insulated from polysilicon layer 208. In various embodiments, thelower surface of spacer structure 220 can be leveled with or below thelower surface of polysilicon layer 208. For example, the lower surfaceof spacer structure 220 may be in stop layer 224 or in insulating layer202. In some embodiments, spacer structure 220 includes a dielectricmaterial, such as silicon oxide, silicon nitride, silicon oxynitride, ora combination thereof. It should be understood that, if spacer structure220 includes the same material as insulating structure 218 and/or spacerstructure 220, the upper surface and/or lower surface of spacerstructure 220 may not be distinguishable.

FIG. 3A illustrates a cross-sectional view of another exemplary contactstructure in a semiconductor device 300, according to some embodiments.FIG. 3B illustrates a top view of the contact structure in semiconductordevice 300, according to some embodiments. For the ease of illustration,FIGS. 3A and 3B are described together, and the details of other samestructures in both semiconductor devices 200 and 300 are not repeatedfor ease of description.

As shown in FIG. 3A, semiconductor device 300 includes a contactstructure 316 and a spacer structure 320. Contact structure 316 mayinclude a first contact portion 316-1 and a second contact portion 316-2in contact with and conductively connected to each other. Contactstructure 316 may extend through spacer structure 320 such that spacerstructure 320 insulates contact structure 316 from polysilicon layer208. Different from contact structure 216, the contact interface betweenfirst and second contact portions 316-1 and 316-2 may be lower than theupper surface of polysilicon layer 208. For example, the contactinterface (e.g., the lower surface of first contact portion 316-1 andthe upper surface of second contact portion 316-2) may be between theupper and lower surfaces of polysilicon layer 208. In some embodiments,the contact interface may be coplanar (or at least nominally coplanarwith) the lower surface of polysilicon layer 208. That is, first contactportion 316-1 may extend in (e.g., extend through) polysilicon layer208. Accordingly, second contact portion 316-2 may have a reducedthickness in spacer structure 320.

Different from spacer structure 220, spacer structure 320 surrounds atleast a portion of first contact portion 316-1 such that first contactportion 316-1 is insulated from polysilicon layer 208. If the contactinterface between first and second contact portions 316-1 and 316-2 isbetween upper and lower surfaces of polysilicon layer 208, spacerstructure 320 may also insulate a portion of second contact portion316-2 from polysilicon layer 208. In some embodiments, as shown in FIG.3B, a lateral cross-sectional area of second contact portion 316-2 isgreater than or equal to a lateral cross-sectional area of first contactportion 316-1 such that first contact portion 316-1 is fully overlappedwith second contact portion 316-2. The materials and shapes of first andsecond contact portions 316-1 and 316-2, and spacer structure 320 mayrespectively be similar to or the same as those for first and secondcontact portions 216-1 and 216-2 and spacer structure 220, and thedetailed description is not repeated herein.

FIGS. 4A-4D illustrate a fabrication process for forming a semiconductordevice, according to some embodiments of the present disclosure. FIG. 7illustrates a flowchart of a method 700 for forming a semiconductordevice, according to some embodiments of the present disclosure.Examples of the semiconductor device depicted in FIGS. 4A-4D and 7include the semiconductor devices depicted in FIGS. 2A and 2B. FIGS.4A-4D and 7 will be described together. It is understood that theoperations shown in method 700 are not exhaustive and that otheroperations can be performed as well before, after, or between any of theillustrated operations. Further, some of the operations may be performedsimultaneously, or in a different order than shown in FIG. 7.

Referring to FIG. 7, method 700 starts at operations 702 and 704, inwhich a trench structure is formed in a base structure, and a spacerstructure is formed in the trench structure. FIG. 4A illustrates acorresponding structure.

As shown in FIG. 4A, at the beginning of the fabrication process, atrench structure may be formed in a base structure 404. The shapes anddepth of the trench structure may correspond to those of thesubsequently-formed spacer structure. Base structure 404 may include apolysilicon layer 408 on a stop layer 424, which is further on aninsulating layer 402. Polysilicon layer 408 may include a sacrificialsublayer, which subsequently forms a polysilicon sublayer in polysiliconlayer 408. The detailed description of polysilicon layer 408, stop layer424, and insulating layer 402 may be referred to the description ofpolysilicon layer 208, stop layer 224, and insulating layer 202, and isnot repeated herein.

The trench structure may enclose an area in the peripheral region ofbase structure 404 (e.g., polysilicon layer 408) such that the enclosedarea (e.g., in polysilicon layer 408) may be insulated from the portionof polysilicon layer 408 outside of the trench structure. In someembodiments, the trench structure may extend from the upper surface ofpolysilicon layer 408 to at least the lower surface of polysilicon layer408. For example, the lower surface of the trench structure may stop onor in stop layer 424. In some embodiments, the lower surface ofpolysilicon layer 408 stops at stop layer 424. A thickness/depth of thetrench structure may at least be the thickness of polysilicon layer 408along the z-direction. The trench structure may be formed by anysuitable patterning process such as dry etch and/or wet etch, followinga photolithography process.

Base structure 404 may be formed on one side (e.g., the first side) of asubstrate.

The substrate can be a silicon substrate or a carrier substrate, made ofany suitable materials, such as semiconductors, glass, sapphire,plastic, to name a few. In some embodiments, insulating layer 402includes a dielectric material such as silicon oxide. In someembodiments, stop layer 424 includes a high-k dielectric material suchas aluminum oxide. In some embodiments, polysilicon layer 408 includespolysilicon having a uniform doping profile. In some embodiments,insulating layer 402, stop layer 424, and polysilicon layer 408 aresequentially formed on the substrate by any suitable film depositionmethods such as chemical vapor deposition (CVD), physical vapordeposition (PVD), atomic layer deposition (ALD), electroplating,electroless deposition, and a combination thereof. Subsequently, thesubstrate may be removed or thinned for forming various structures suchas contact vias. In some embodiments, the substrate is removed orthinned at a suitable time of the fabrication process such that contactvias can be formed from the lower surface of base structure 404.

A dielectric stack, which subsequently forms the memory stack, can beformed on base structure 404 on the substrate. The dielectric stack caninclude a plurality of interleaved sacrificial layers and dielectriclayers. In some embodiments, the dielectric stack, having a pluralitypairs of a sacrificial layer and a dielectric layer, is formed onpolysilicon layer 408. The interleaved sacrificial layers and dielectriclayers can be alternatively deposited on polysilicon layer 408 to formthe dielectric stack. In some embodiments, each dielectric layerincludes a layer of silicon oxide, and each sacrificial layer includes alayer of silicon nitride. In some embodiments, a pad oxide layer (e.g.,silicon oxide layer, not shown) is formed between polysilicon layer 408and the dielectric stack. An insulating structure 418, having a suitabledielectric material such as silicon oxide, can be deposited over thedielectric stack and base structure 404 at a suitable time during thefabrication process such that the dielectric stack is located ininsulating structure 418. The dielectric stack, insulating structure418, and the pad oxide layer (if any) can be formed by one or more thinfilm deposition processes including, but not limited to, CVD, PVD, ALD,or any combination thereof.

The trench structure can be formed, in the peripheral region of thesemiconductor device, at any suitable time during the fabricationprocess, before the first contact portion of a contact structure isformed. In some embodiments, the trench structure is formed bypatterning base structure 404 (e.g., polysilicon layer 408) using a“zero mask,” which is used for patterning base structure 404 before anystructure is formed thereon. In some embodiments, the trench structureis formed by patterning the dielectric stack, e.g., for formingbottom-select-gate cut structures, after one or more pairs ofsacrificial layer and dielectric layer are formed on base structure 404.The pattern for forming the trench structure may thus be incorporatedinto existing patterning masks such that the etching of base structure404 for forming the trench structure can be performed with otherexisting etching operations, reducing the number of total etchingoperations. In various embodiments, the trench structure can also beformed by a separate patterning/etching process, or at the same timewith other suitable structures, depending on the fabrication process.

A spacer structure 420 may be formed in the trench structure. Adielectric material, e.g., silicon oxide, can be deposited to fill thetrench structure, forming spacer structure 420. The dielectric materialmay be deposited by any suitable film deposition method such as CVD,PVD, ALD, and a combination thereof, and can be deposited at anysuitable time during the fabrication process, before the first contactportion of a contact structure is formed. In some embodiments, spacerstructure 420 can be formed by the same deposition process that formsinsulating structure 418, after the formation of the dielectric stack.In some embodiments, spacer structure 420 can be formed by the samedeposition process that forms the bottom-select-gate cut structures inthe dielectric stack, after one or more pairs of sacrificial layer anddielectric layer are formed on base structure 404 and before the entiredielectric stack is formed. In various embodiments, spacer structure 420can also be formed by a separate deposition process, or be filled withthe dielectric material at the same time with other suitable structures,depending on the fabrication process.

Before the formation of the contact structure, other structures,although not shown in FIGS. 4A-4D, can be formed in the semiconductordevice (e.g., the dielectric stack). In some embodiments, a channelstructure extending vertically through the dielectric stack, polysiliconlayer 408, and stopping at stop layer 424 is formed. In someembodiments, to form the channel structure, a channel hole, e.g., anopening, extending vertically through the dielectric stack, andpolysilicon layer 408, is formed, and a memory film (e.g., a blockinglayer, a storage layer, and a tunneling layer) and a semiconductorchannel are sequentially formed along a sidewall of the channel hole.The deposition of the films and layers in the channel hole may includeALD, CVD, PVD, any other suitable processes, or any combination thereof.In some embodiments, a channel plug is formed above and in contact withthe semiconductor channel In some embodiments, fabrication processes forforming the channel hole include wet etching and/or dry etchingprocesses, such as deep-ion reactive etching (DRIE). The etching of thechannel hole continues until being stopped by stop layer 424, due to theetching selectivity between the materials of stop layer 424 andpolysilicon layer 408, according to some embodiments.

To conductively connect polysilicon layer 408 and the channel structure,a polysilicon sublayer 408-1, in contact with and conductively connectedto the semiconductor channel, is formed in polysilicon layer 408. Insome embodiments, a lower portion of the memory film is removed suchthat the memory film becomes disconnected. Polysilicon sublayer 408-1,in contact with the semiconductor channel, can be formed by replacingthe sacrificial sublayer with a sublayer of polysilicon. The formationof polysilicon sublayer 408-1 may include suitable dry etch and/or wetetch processes, CVD, PVD, ALD, and a combination thereof. An insulatingspacer, dividing the memory cells into a plurality of blocks, can alsobe formed. The formation of the insulating spacer may include suitabledry etch and/or wet etch processes, CVD, PVD, ALD, and a combinationthereof A gate replacement process can be performed to replace thesacrificial layers in the dielectric stack to form a plurality ofconductor layers. A memory stack 406, having a plurality of interleavedconductor layers 410 and dielectric layers 412, can be formed onpolysilicon layer 408. The gate replacement process may include asuitable isotropic etching process, CVD, PVD, ALD, and a combinationthereof. The channel structures, extending through memory stack 406, maybe in contact with and conductively connected to polysilicon layer 408through the semiconductor channel In some embodiments, memory stack 406may be repetitively patterned to form a staircase structure, whichincludes a plurality of stairs extending laterally (e.g., along thex/y-direction). The patterning process of memory stack 406 may includerepetitive photolithography processes and recess etches (e.g., anisotropic etching process).

Referring back to FIG. 7, method 700 proceeds to operation 706, in whicha first contact portion is formed on the upper surface of the basestructure and surrounded by the spacer structure. FIG. 4B illustrates acorresponding structure.

As shown in FIG. 4B, a first contact portion 416-1 may be formed ininsulating structure 418 and landed on the upper surface of basestructure 404. The lower surface of first contact portion 416-1 may bein the enclosed area in polysilicon layer 408 defined by spacerstructure 420 such that, laterally, first contact portion 416-1 issurrounded by spacer structure 420. In some embodiments, the lowersurface of first contact portion 416-1 extends below the upper surfaceof polysilicon layer 408. In some embodiments, first contact portion416-1 is formed by the same process that forms a word line contact 414,which lands on a respective stair to form a conductive connection withconductor layer 410 in the stair. First contact portion 416-1 and wordline contact 414 may each include a suitable conductive material such astungsten.

The formation of first contact portion 416-1 and word line contact 414may include a patterning process followed by a suitable film depositionprocess. The patterning process may remove portions of insulatingstructure 418 to form openings that correspond to the locations andpositions of first contact portion 416-1 and word line contact 414. Insome embodiments, the opening for first contact portion 416-1 extends ininsulating structure 418 and exposes the enclosed area in polysiliconlayer 408. In some embodiments, the opening for word line contact 414extends in insulating structure 418 and exposes conductor layer 410 inthe corresponding stair. The deposition of the conductive material mayinclude CVD, PVD, ALD, electroplating, electroless plating, and acombination thereof.

Referring back to FIG. 7, method 700 proceeds to operation 708, in whicha hole is formed extending from the lower surface of the base structureto the first contact portion, the hole being surrounded by the spacerstructure. FIG. 4C illustrates a corresponding structure.

As shown in FIG. 4C, a hole 415 may be formed extending from the lowersurface of base structure 404 to first contact portion 416-1. Hole 415may be surrounded by the spacer structure 420. A portion of basestructure 404, i.e., a portion of insulating layer 402, stop layer 424,and polysilicon layer 408, may be removed to form hole 415, whichextends from the lower surface of base structure 404, e.g., the lowersurface of insulating layer 402, to first contact portion 416-1. Hole415 may be in contact with and exposing first contact portion 416-1. Asshown in FIG. 4C, the portion of hole 415 in polysilicon layer 408 maybe located in the enclosed area defined by spacer structure 420. Thelateral dimensions of hole 415 may be sufficiently large to fullycontact first contact portion 416-1, and may be sufficiently small tonot exceed the enclosed area surrounded by spacer structure 420. In someembodiments, hole 415 is isolated from polysilicon layer 408 outside ofspacer structure 420. In some embodiments, the lateral dimensions ofhole 415 may be less than or equal to the lateral dimensions of theenclosed area.

In some embodiments, another hole 425 for forming a source contactstructure may be formed in the same patterning process that forms hole415. Hole 425 may extend from the lower surface of base structure 404,e.g., insulating layer 402, to polysilicon layer 408. The patterningprocess may include a suitable etching process, e.g., dry etch and/orwet etch processes.

In various embodiments, the substrate, on which base structure 404 isformed, is removed prior to the formation of hole 415. The substrate maybe removed at any suitable time during the fabrication process by agrinding process, CMP, recess etch, or a combination thereof. In someembodiments, the lower surface of base structure 404 is the lowersurface of insulating layer 402.

Referring back to FIG. 7, method 700 proceeds to operation 710, in whicha second contact portion is formed in the hole, in contact with thefirst contact portion. FIG. 4D illustrates a corresponding structure.

As shown in FIG. 4D, a second contact portion 416-2 may be formed inhole 415, in contact with first contact portion 416-1. A conductivematerial, such as tungsten, can be deposited to fill in hole 415 and theother hole 425. Any suitable film deposition method can be performed todeposit the conductive material. For example, the deposition method mayinclude CVD, PVD, ALD, electroplating, electroless plating, or acombination thereof. In some embodiments, a source contact structure 426may be formed by the same deposition process that forms second contactportion 416-2. A contact structure 416, having first and second contactportions 416-1 and 416-2 in contact with each other, may be formedextending insulating structure 418 and base structure 404 (e.g., spacerstructure 420), connecting peripheral circuits of the semiconductordevice. Meanwhile, source contact structure 426 may be formed in basestructure 404 in contact with and conductively connected to polysiliconlayer 408. Channel structures may then be conductively connected to thesource through polysilicon layer 408 and source contact structure 426.

FIGS. 5A-5D illustrate a fabrication process for forming a semiconductordevice, according to some embodiments of the present disclosure. FIG. 8illustrates a flowchart of a method 800 for forming a semiconductordevice, according to some embodiments of the present disclosure.Examples of the semiconductor device depicted in FIGS. 5A-5D and 8include semiconductor device depicted in FIGS. 3A and 3B. FIGS. 5A-5Dand 8 will be described together. It is understood that the operationsshown in method 800 are not exhaustive and that other operations can beperformed as well before, after, or between any of the illustratedoperations. Further, some of the operations may be performedsimultaneously, or in a different order than shown in FIG. 8. For easeof illustration, parts in FIGS. 5A-5D that are similar to those in FIGS.4A-4D are depicted using the same numerals, and the detaileddescriptions of these parts are not repeated herein.

Referring to FIG. 8, method 800 starts at operations 802 and 804, inwhich a first hole is formed in a base structure, and a well structureis formed in the first hole. FIG. 5A illustrates a correspondingstructure.

As shown in FIG. 5A, at the beginning of the fabrication process, afirst hole may be formed in a base structure 404. The shapes and depthof first hole may correspond to those of the subsequently-formed spacerstructure. In some embodiments, the lower surface of the first hole mayexpose stop layer 424. In some embodiments, the depth of the first holemay be higher than or equal to the thickness of polysilicon layer 408such that the subsequently-formed spacer structure can insulate thecontact structure from polysilicon layer 408. The first hole may beformed at any suitable time during a fabrication process, and can beformed with other structures or in a separate process. A suitableetching process, e.g., wet etch and/or dry etch, can be performed as thepatterning process to form the first hole. The detailed description ofthe location and timing to form the first hole may be referred to thatof the trench structure described in FIGS. 4A-4D, and is not repeatedherein.

A well structure 519 may be formed in base structure 404 by filling thefirst hole with a dielectric material. The lower surface of wellstructure 519 may be in contact with the stop layer 424. In someembodiments, the lower surface of well structure 519 may be on or belowthe top surface of stop layer 424. The upper surface well structure 519may be defined as the surface coplanar with the upper surface ofpolysilicon layer 408, for ease of illustration. In some embodiments,the dielectric material includes silicon oxide, and can be formed in asuitable film deposition method such as CVD, PVD, ALD, or a combinationthereof. The detailed description of the location and timing to formwell structure 519 may be referred to that of spacer structure 420described in FIGS. 4A-4D, and is not repeated herein.

Referring back to FIG. 8, method 800 proceeds to operation 806, in whicha first contact portion is formed in the well structure. FIG. 5Billustrates a corresponding structure.

As shown in FIG. 5B, a first contact portion 516-1 may be formed in wellstructure 519. First contact portion 516-1 may be formed in insulatingstructure 418 and landed on the lower surface of well structure 519.First contact portion 516-1 may be surrounded by well structure 519. Insome embodiments, first contact portion 516-1 is formed by the sameprocess that forms a word line contact 414, which lands on a respectivestair to form a conductive connection with conductor layer 410 in thestair. First contact portion 516-1 and word line contact 414 may eachinclude a suitable conductive material such as tungsten. In someembodiments, the lower surface of first contact portion 516-1 does notreach the lower surface of well structure 519 but is below the uppersurface of polysilicon layer 408 such that the etching from the lowersurface of base structure 404 can be reduced when the second contactportion is being formed. That is, the second hole to form the secondcontact portion does not need to reach the upper surface of polysiliconlayer 408 from the lower surface of base structure 404, i.e., insulatinglayer 402.

The formation of first contact portion 516-1 and word line contact 414may include a patterning process followed by a suitable film depositionprocess. The patterning process may remove portions of insulatingstructure 418 to form openings, at desired depths, that correspond tothe locations and positions of first contact portion 516-1 and word linecontact 414. In some embodiments, the opening for first contact portion516-1 extends in insulating structure 418 and exposes the enclosed areain polysilicon layer 408. In some embodiments, the opening for word linecontact 414 extends in insulating structure 418 and exposes conductorlayer 410 in the corresponding stair. The deposition of the conductivematerial may include CVD, PVD, ALD, electroplating, electroless plating,and a combination thereof.

Referring back to FIG. 8, method 800 proceeds to operation 808, in whicha second hole is formed extending from the lower surface of the basestructure to the first contact portion. A spacer structure is formed.FIG. 5C illustrates a corresponding structure.

As shown in FIG. 5C, a second hole 515 may be formed extending from thelower surface of base structure 404 to first contact portion 516-1. Aspacer structure 520 may be formed from the remaining portion of wellstructure 519. Second hole 515 may be surrounded by spacer structure 520in polysilicon layer 408. A portion of base structure 404, i.e., aportion of insulating layer 402, stop layer 424, and polysilicon layer408 (if any), may be removed to form second hole 515, which extends fromthe lower surface of base structure 404, e.g., the lower surface ofinsulating layer 402, to first contact portion 516-1. Second hole 515may be in contact with and exposing first contact portion 516-1. Invarious embodiments, the upper surface of second hole 515 may becoplanar with or above the upper surface of stop layer 424 to ensuresufficient contact between first contact portion 516 and second hole 515(or subsequently-formed second contact portion). As shown in FIG. 5C,the lateral dimensions of hole 415 may be sufficiently large to fullycontact first contact portion 516-1, and may be sufficiently small tonot exceed spacer structure 420. In some embodiments, second hole 515 isisolated from polysilicon layer 408 outside of spacer structure 520. Insome embodiments, the lateral dimensions of second hole 515 may be lessthan or equal to the lateral dimensions of well structure 519 (or spacerstructure 520). In some embodiments, another hole 425, for forming asource contact structure 426, may be formed in the same patterningprocess that forms hole 415. The patterning process may include asuitable etching process, e.g., dry etch and/or wet etch processes.

Referring back to FIG. 8, method 800 proceeds to operation 810, in whicha second contact portion is formed in the second hole and in contactwith the first contact portion. FIG. 5D illustrates a correspondingstructure.

As shown in FIG. 5D, a second contact portion 516-2 may be formed insecond hole 515, in contact with first contact portion 516-1. Aconductive material, such as tungsten, can be deposited to fill insecond hole 515 and the other hole 425. Any suitable film depositionmethod can be performed to deposit the conductive material. For example,the deposition method may include CVD, PVD, ALD, electroplating,electroless plating, or a combination thereof. In some embodiments, asource contact structure 426 may be formed by the same depositionprocess that forms second contact portion 516-2. A contact structure516, having first and second contact portions 516-1 and 516-2 in contactwith each other, may be formed extending insulating structure 418 andbase structure 404 (e.g., spacer structure 520), connecting peripheralcircuits of the semiconductor device. A lower surface of first conductorportion 516-1 may be below the upper surface of spacer structure 520.The upper surface of second conductor portion 516-2 may be aflat/leveled surface.

Embodiments of the present disclosure provide a semiconductor device.The semiconductor device includes an insulating layer, a conductivelayer over the insulating layer, and a spacer structure in theconductive layer and in contact with the insulating layer. Thesemiconductor device also includes a first contact structure in thespacer structure and extending vertically through the insulating layer.The first contact structure includes a first contact portion and asecond contact portion in contact with each other. An upper surface ofthe second contact portion is coplanar with an upper surface of theconductive layer.

In some embodiments, the conductive layer includes polysilicon.

In some embodiments, a lateral cross-sectional area of the secondcontact portion is greater than or equal to a lateral cross-sectionalarea of the first contact portion.

In some embodiments, the semiconductor device further includes a memorystack comprising interleaved conductive layers and dielectric layersover the conductive layer and apart from the contact structure. In someembodiments, the semiconductor device also includes a channel structurein the memory stack and into the conductive layer. The channel structureincludes a semiconductor channel A lower portion of the semiconductorchannel is in contact with the conductive layer. A second contactstructure extends vertically in the insulating layer and is in contactwith the conductive layer.

In some embodiments, the channel structure further includes a memorylayer in contact with and surrounding the semiconductor channel In someembodiments, a lower portion of the memory layer is disconnected toexpose the semiconductor channel such that the semiconductor channel isin contact with the conductive layer.

In some embodiments, the spacer structure comprises a dielectricmaterial.

In some embodiments, the first contact structure electrically connects aperipheral circuit and a contact pad on opposite sides of the insulatingand conductive layers.

In some embodiments, the first contact structure is electricallyconnected to the second contact structure.

Embodiments of the present disclosure provide a semiconductor device.The semiconductor device includes an insulating layer, a conductivelayer over the insulating layer, and a spacer structure in theconductive layer and in contact with the insulating layer. Thesemiconductor device also includes a first contact structure in thespacer structure and extending vertically through the insulating layer.The first contact structure includes a first contact portion and asecond contact portion in contact with each other. The contact structurealso includes a lower surface of the first contact portion is in contactwith an upper surface of the second contact portion at a contactinterface that is below an upper surface of the conductive layer.

In some embodiments, the contact interface is coplanar with a lowersurface of the conductive layer.

In some embodiments, the conductive layer includes polysilicon.

In some embodiments, a lateral cross-sectional area of the secondcontact portion is greater than or equal to a lateral cross-sectionalarea of the first contact portion.

In some embodiments, the semiconductor device further includes a memorystack comprising interleaved conductive layers and dielectric layersover the conductive layer and apart from the contact structure, and achannel structure in the memory stack and into the conductive layer. Thechannel structure includes a semiconductor channel. A lower portion ofthe semiconductor channel is in contact with the conductive layer. Asecond contact structure extends vertically in the insulating layer andis in contact with the conductive layer.

In some embodiments, the channel structure further includes a memorylayer in contact with and surrounding the semiconductor channel In someembodiments, a lower portion of the memory layer is disconnected toexpose the semiconductor channel such that the semiconductor channel isin contact with the conductive layer.

In some embodiments, the spacer structure comprises a dielectricmaterial.

In some embodiments, the first contact structure electrically connects aperipheral circuit and a contact pad on opposite sides of the insulatingand conductive layers.

In some embodiments, the first contact structure is electricallyconnected to the second contact structure.

Embodiments of the present disclosure provide a method for forming asemiconductor device. The method includes forming a spacer structurefrom a first surface of the base structure into the base structure,forming a first contact portion surrounded by the spacer structure, andforming a second contact portion in contact with the first contactportion. The second contact extends from a second surface of the basestructure into the base structure.

In some embodiments, forming the spacer structure includes removing aportion of the base structure on the first surface to form an openingstructure extending from the first surface into the base structure. Insome embodiments, forming the spacer structure includes filling theopening structure with an insulating material.

In some embodiments, a lower surface of the opening structure is betweenthe first and second surfaces of the base structure.

In some embodiments, the base structure includes an insulating layer anda conductive layer over the insulating layer. In some embodiments,forming the opening structure includes forming a trench structure in theconductive layer to form a first portion of the conductive layerenclosed by the trench structure and a second portion of the conductivelayer outside the trench structure.

In some embodiments, the first portion of the conductive layer isisolated from the second portion of the conductive layer by the trenchstructure, and a lower surface of the trench structure is in contactwith the insulating layer.

In some embodiments, forming the first contact portion surrounded by thespacer structure includes forming the first contact portion in contactwith the first portion of the conductive layer and surrounded by theinsulating material.

In some embodiments, forming the second contact portion includes forminga hole extending from the second surface of the base structure into thebase structure and in contact with the first contact portion. The holeis insulated from the second portion of the conductive layer by thespacer structure. In some embodiments, forming the second contactportion includes filling the hole with a conductive material.

In some embodiments, the base structure includes an insulating layer anda conductive layer over the insulating layer. In some embodiments,forming the opening structure includes forming a hole in the conductivelayer, a lower surface of the hole in contact with the insulating layer.

In some embodiments, forming the first contact portion surrounded by thespacer structure includes forming the first contact portion extending inthe insulating material. A lower surface of the first contact portion isbelow an upper surface of the spacer structure.

In some embodiments, the lower surface of the first contact portion isin contact with the insulating layer.

In some embodiments, forming the second contact portion includes forminganother hole extending from the second surface of the base structureinto the base structure and in contact with the first contact portion.The hole is insulated from the conductive layer by the insulatingmaterial. In some embodiments, forming the second contact portionincludes filling the hole with a conductive material.

In some embodiments, the base structure includes an insulating layer, anetch-stop layer over the insulating layer, and a conductive layer overthe etch-stop layer. In some embodiments, forming the opening structureincludes removing a portion of the conductive layer until a lowersurface of the opening structure stops on the etch-stop layer.

In some embodiments, the method further includes forming a memory stackon the base structure away from the contact structure. The insulatingmaterial is deposited before a formation of the memory stack.

In some embodiments, the method further includes forming a memory stackon the base structure away from the contact structure. The insulatingmaterial is deposited after a formation of the memory stack.

In some embodiments, the method further includes forming a channelstructure comprising a semiconductor channel in the memory stack. Alower portion of the semiconductor channel is in contact with theconductive layer. In some embodiments, forming a contact structureextending from the second surface of the base structure into the basestructure and in contact with the conductive layer. The contactstructure is formed in the same process that forms the second contactportion.

The foregoing description of the specific embodiments will so reveal thegeneral nature of the present disclosure that others can, by applyingknowledge within the skill of the art, readily modify and/or adapt forvarious applications such specific embodiments, without undueexperimentation, without departing from the general concept of thepresent disclosure. Therefore, such adaptations and modifications areintended to be within the meaning and range of equivalents of thedisclosed embodiments, based on the teaching and guidance presentedherein. It is to be understood that the phraseology or terminologyherein is for the purpose of description and not of limitation, suchthat the terminology or phraseology of the present specification is tobe interpreted by the skilled artisan in light of the teachings andguidance.

Embodiments of the present disclosure have been described above with theaid of functional building blocks illustrating the implementation ofspecified functions and relationships thereof. The boundaries of thesefunctional building blocks have been arbitrarily defined herein for theconvenience of the description. Alternate boundaries can be defined solong as the specified functions and relationships thereof areappropriately performed.

The Summary and Abstract sections may set forth one or more but not allexemplary embodiments of the present disclosure as contemplated by theinventor(s), and thus, are not intended to limit the present disclosureand the appended claims in any way.

The breadth and scope of the present disclosure should not be limited byany of the above-described exemplary embodiments, but should be definedonly in accordance with the following claims and their equivalents.

What is claimed is:
 1. A method for forming a semiconductor device,comprising: forming a spacer structure from a first surface of the basestructure into the base structure; forming a first contact portionsurrounded by the spacer structure; and forming a second contact portionin contact with the first contact portion, the second contact extendingfrom a second surface of the base structure into the base structure. 2.The method of claim 1, wherein forming the spacer structure comprises:removing a portion of the base structure on the first surface to form anopening structure extending from the first surface into the basestructure; and filling the opening structure with an insulatingmaterial.
 3. The method of claim 1, wherein a lower surface of theopening structure is between the first and second surfaces of the basestructure.
 4. The method of claim 2, wherein the base structurecomprises an insulating layer and a conductive layer over the insulatinglayer, and forming the opening structure comprises forming a trenchstructure in the conductive layer to form a first portion of theconductive layer enclosed by the trench structure and a second portionof the conductive layer outside the trench structure.
 5. The method ofclaim 4, wherein the first portion of the conductive layer is isolatedfrom the second portion of the conductive layer by the trench structure,and a lower surface of the trench structure is in contact with theinsulating layer.
 6. The method of claim 4, wherein forming the firstcontact portion surrounded by the spacer structure comprises: formingthe first contact portion in contact with the first portion of theconductive layer and surrounded by the insulating material.
 7. Themethod of claim 1, wherein forming the second contact portion comprises:forming a hole extending from the second surface of the base structureinto the base structure and in contact with the first contact portion,the hole being insulated from the second portion of the conductive layerby the spacer structure; and filling the hole with a conductivematerial.
 8. The method of claim 2, wherein the base structure comprisesan insulating layer and a conductive layer over the insulating layer,and forming the opening structure comprises: forming a hole in theconductive layer, a lower surface of the hole in contact with theinsulating layer.
 9. The method of claim 8, wherein forming the firstcontact portion surrounded by the spacer structure comprises: formingthe first contact portion extending in the insulating material, a lowersurface of the first contact portion being below an upper surface of thespacer structure.
 10. The method of claim 9, wherein the lower surfaceof the first contact portion is in contact with the insulating layer.11. The method of claim 1, wherein forming the second contact portioncomprises: forming another hole extending from the second surface of thebase structure into the base structure and in contact with the firstcontact portion, the hole being insulated from the conductive layer bythe insulating material; and filling the hole with a conductivematerial.
 12. The method of claim 2, wherein the base structurecomprises an insulating layer, an etch-stop layer over the insulatinglayer, and a conductive layer over the etch-stop layer; and forming theopening structure comprises removing a portion of the conductive layeruntil a lower surface of the opening structure stops on the etch-stoplayer.
 13. The method of claim 1, further comprising forming a memorystack on the base structure away from the contact structure, wherein theinsulating material is deposited before a formation of the memory stack.14. The method of claim 1, further comprising forming a memory stack onthe base structure away from the contact structure, wherein theinsulating material is deposited after a formation of the memory stack.15. The method of 13, further comprising: forming a channel structurecomprising a semiconductor channel in the memory stack, a lower portionof the semiconductor channel being in contact with the conductive layer;and forming a contact structure extending from the second surface of thebase structure into the base structure and in contact with theconductive layer, wherein the contact structure is formed in the sameprocess that forms the second contact portion.